The spice gummelpoon sgp model 1 has been the industry standard bipolar transistor model for more than 20 yrs. Spicetype gummelpoon gp model, or to do the full design with a linear sparameter based model. Pdf comparison of the new vbic and conventional gummel. Comparison of a new modified gummelpoon model and vbic for algaasgaas hbts a. Now its time to model the transistor as a subcircuit and create a bias network that will be the core of the amplifier. The model was developed as an industry standard replacement for the spice gummelpoon sgp model, to improve deficiencies of the sgp model that have become apparent over time because of the. Poon, an integral charge control model of bipolar transistors, bell syst. The early voltages are treated as functions of the applied voltages. Poon in 1970s in order to simulate the working principal of the bipolar transistor. Modified gummelpoon model for susceptibility prediction.
Pdf a scaleable, statistical spice gummelpoon model for. Users of the sgp model, however, have found it to be inadequate in representing many of the physical effects important in modern bipolar transistors. Pdf a scaleable, statistical spice gummelpoon model for sige. It is based on the fact that the vbic model is a direct enhancement and extension of sgp model. A consistent theoretical approach is used which facilitates an understanding of the foundations and limitations of the derived formulas. Large signal model charge control model the charge control model of a bipolar transistor is an extension of the charge control model of a pn diode. In chapter 2 we will start with discussing the equivalent circuit of mextram. The agilent a highfrequency bjt model is a pooon version of the gummel poon model, with a measurement and extraction methodology that has been developed specifically for highfrequency devices. It is part of the gummelpoon bipolar model parameter extraction toolkit. Documentation of the fbh hbt model designers guide. The spice gummelpoon model has served the ic industry well, however it is not sufficiently accurate for design in modern bipolar and bicmos technologies.
Try findchips pro for gummel poon model parameter hbt. Chapter 14 bjt models ithe bipolarjunction transistor bjt model in hspice is an adaptation of the integral charge control model of gummel and poon. The gummel poon model is a compact model for bipolar junction transistors bjt which also takes into account effects of low currents and at highlevel injection. An example is given for vbic model extraction by going through spice gummelpoon sgp model. The hspice model extends the original gummelpoon model to include several effects at high bias levels. It was first described in an article published by hermann gummel and h. An analytical model for single and double heterojunction bipolar transistors has been developed by employing the concepts of the gummelpoon model. Used to model base collector bias on forward beta and is. Poon at bell labs in 1970 the gummelpoon model and modern variants of it are widely used in the popular circuit simulators such as spice. This model is known to address many problems of the spice gummelpoon model.
Pdf a scaleable, statistical model has been developed for silicon germanium heterojunction transistors sige hbts, which are components of a. This model takes into account the conductivity modulation and carriercarrier scattering by using nonlinear current sources. The effect of carrier recombination at the emitterbase heterojunction, space charge region scr width modulation effect, and basewidening effect at. This paper describes a new model of the bipolar transistor by which the effects of rf. The goal of this model is to overcome some of the problems associated with eebjt1 or gummelpoon models limited accuracy and parameter extraction difficulty with regard to silicon rfmicrowave transistors. The gummelpoon model is a model of the bipolar junction transistor. Comparison of germanium bipolar junction transistor. Used to model deviation of emitter base diode from ideal usually approximately 1. Bjt power amplifier verifies the accuracy of this approach. This manual describes the modeling of a bipolar transistor using the gummel poon model as implemented in the simulator spice.
Thyristor compact modeling based on gummelpoon model including parameter extraction procedure. The current gain of the transistor is studied relating it to the injection level in order to provide a. More general describe transistor in any mode of operation. Comparison of the new vbic and conventional gummelpoon. The results enable one to predict how changes in the geometry and composition of a transistor would affect performance. The gummelpoon model is a compact model for bipolar junction transistors bjt which also takes into account effects of low currents and at highlevel injection. The basic parameter for both ebersmoll and gummelpoon models. This model was initially proposed by hermann gummel and h. We present in this paper a compact model of bipolar transistors, suitable for network analysis computer programs. A scaleable, statistical spice gummelpoon model for sige hbts article pdf available in ieee journal of solidstate circuits 339. It deals with extensions of the gp model that are necessary for the description. Modified gummelpoon model for susceptibility prediction ieee. It was first described in a paper published by hermann gummel and h. A gummelpoon model for pnp heterojunction bipolar transistors with a compositionally graded base.
Theoretical values of various parameters in the gummel. Recent listings manufacturer directory get instant insight into. Bjt, gummelpoon model, parameter extraction, errorfree computation 1 introduction the accuracy of circuit simulations depends on a reliable, robust and unambiguous parameter extraction method. Model gummelpoon npn, pdiss230mw, vcemax12v, icmax.
Comparison of a new modified gummelpoon model and vbic. Through the use of a new charge control relation linking junction voltages, collector current, and base charge, the model includes high injection effects. Recent listings manufacturer directory get instant insight into any electronic component. Pdf a gummelpoon model for pnp heterojunction bipolar. We conclude with a discussion of the strengths and limitations of the model and further possibilities for its development. Improved early effect modeling quasi saturation modeling avalanche multiplication in collector junction modeling electrothermal or self heating modeling parasitic substrate transistor modeling. Firstly, the standard sgp model is extracted in the standard way. The agilent a highfrequency bjt model is a pooon version of the gummelpoon model, with a measurement and extraction methodology that has been developed specifically for highfrequency devices. A new parameter extraction methodology local ratio evaluation is presented which is well suited for converting tone model to another. Extraction of vbic model for sige hbts made easy by going. Linking current and total charges in the base are calculated. Elen 251 sgp bjt model page 1 spice gummelpoon sgp model is most widely used in the semiconductor industry.
This enables us to give an overview of all the regions and the physical effects in those regions that. Gummel poon model from wikipedia, the free encyclopedia schematic of spice gummelpoon model npn the gummelpoon model is a model of the bipolar junction transistor. In section 5, we perform a comparison of the models results with reported experimental results for an inalasingaas pnp hbt and with results derived using a commercial, numerical device simulator. He ebersmoll1 and gummelpoon2 models predict detailed large and smallsignal bjt behavior to support hand analysis or computer simulations. Model builder program mbp is a complete modeling solution that integrates spice simulation, model. The equations for injected minority carrier concentrations are developed based on the thermionic diffusion theory. Current gain, high current phenomena, fabrication technologies, and sige hbts will then be discussed. Shahrol, modelling of npn bipolar junction transistor characteristics using gummel plot technique. Gummelpoon model 4about this manual this manual is intended to explain the basics of modeling a bipolar transistor using the gummelpoon model as it is implemented in the simulation program spice of the university of california berkeley ucb see publication list. The spice gummelpoon sgp model 1 has been the in dustry standard bipolar transistor model for more than 20 yrs. A gummelpoon model for abrupt and graded heterojunction. Proceedings of the 20th international conference on digital audio effects dafx17, edinburgh, uk, september 59, 2017 c b i bc e i be i cc r b b b c r c c e r e e c cb c eb a b figure 1. Manuals nonlinear device models volume 2 highfrequency bjt gummelpoon model print version of this book pdf file the agilent 85193a highfrequency bjt model is a threeterminal version of the gummelpoon model, with a measurement and extraction methodology that has been developed specifically for highfrequency devices. Sgp model improves dc characterization of em3 model by a unified approach.
It was first described in a paper published by hermann k. Various parameters in the gummelpoon model of a bipolar junction transistor are expressed in terms of the basic structure of a transistor. An integral charge control model of bipolar transistors. Above approximately 100200 mhz, the builtin spice bjt model, based on the gummel poon model, fails to accurately predict the real device performance. Poon bipolar transistor model wiley online library. This structure represents pretty much the physical situation of a bipolar transistor, see fig.
A significant effect that the gummelpoon model accounts for is the variation of the transistor and values. Since the most important operation of the bipolar transistor is the forward operation, this will be optimized after the reverse parameters. Pdf thyristor compact modeling based on gummelpoon. Centreville, montreal, canada, h3c 3a7 abstract the reduced vbic equivalent circuit matches the new a new modified. Thyristor compact modeling based on gummelpoon model.
A gummelpoon model for abrupt, single heterojunction npn bipolar phototransistors is described including the effects of the dc base bias on the current and optical gains. The transport model offers a slightly simpler approach while preserving intuition and accuracy. Initially, the excess electron concentration at the emitter end of the quasineutral base is determined by matching the thermionic field emission across the emitterbase heterojunction with the diffusion current at the. A gummelpoon model for abrupt and graded gaalasgaasgaas heterojunction bipolar transistors hbts is developed. A modified twotransistor configuration based on the gummelpoon model is applied. Modeling of bipolar junction transistor 181 figure 1. The gummelpoon model takes the physical operation mechanism of the bjt into consideration, so it can. The model addresses several issues in the gummelpoon model. Assuming the short diode model to be valid, one can express the device currents as a function of the charg in each region, divided by the corresponding transit or lifetime. The model has been created specifically for automatic parameter extraction from measured data including dc and sparameter measurements.